M. Oh, H. Kong, Han Soo Lee, Kyung Il Kim, Kwanghyuk Bae, Soo Bang Kim, Sung Kwan Kim, Moosup Lim, J. Ahn, Tae-Chan Kim, G. Hiroshige, S. Kim, D. Min, Yongjei Lee
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引用次数: 4
摘要
本文提出了一种14μm像素的BSI(背光)QVGA CMOS图像传感器SOC(System On a Chip)，通过对850nm波长的光进行20mhz强度调制来测量TOF(飞行时间)。通过BSI结构和优化后的微透镜，在850nm波长处获得了总QE(Quantum Efficiency)的34%。采用f/1.2的成像镜头和光学强度为0.6W/m2的LED阵列，在1m距离内实现了6m范围内DE(Depth Error)小于1.5%。此外，深度线性测量的决定系数等于0.9999。为了在场景背景光照射下工作，在每个像素上实现双CG(转换增益)方案。
This paper presents a BSI(backside-illumination) 14μm-pixel QVGA CMOS image sensor SOC(System On a Chip) measuring TOF(Time-Of-Flight) by 20MHz-intensity modulation of 850nm-wavelength light. The 34% of overall QE(Quantum Efficiency) at 850nm-wavelength is acquired by BSI structure and optimized micro-lens. The DE(Depth Error) less than 1.5% within 6m is achieved with imaging lens of f/1.2 and LED array of which the optical intensity is 0.6W/m2 at 1m-distance. Additionally, the depth linearity is measured as that the coefficient of determination is equal to 0.9999. In order to operate under background light illumination on a scene, dual CG(Conversion Gain) scheme is implemented in each pixel.
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