利用肖特基二极管-场效应晶体管逻辑实现GaAs集成电路中的多级逻辑门

1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1980.1156064

R. Eden, F. Lee, S. Long, B. Welch, R. Zucca

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引用次数: 13

摘要

将报道一种用于超高速、低功耗平面GaAs数字ic的肖特基二极管-场效应管逻辑电路方法的扩展，该方法允许在一个栅极中执行多达三层逻辑。

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Multi-level logic gate implementation in GaAs ICs using schottky diode-FET logic

An extension of the Schottky diode-FET logic circuit approach for ultra high-speed, low-power planar GaAs digital ICs to configurations allowing up to three levels of logic to be performed in one gate, will be reported.

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来源期刊

1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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