单电子隧道器件的纳米压印技术

Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI:10.1109/IMNC.1999.797507

Y. Hirai, Y. Kanemaki, K. Murata, Y. Tanaka

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引用次数: 0

摘要

提出了一种新型的纳米压印模具制造方法。利用各向异性湿法化学蚀刻技术，初步确定了具有窄间隙的模形，为印迹光刻技术制造单电子器件的隧道势垒提供了理论依据。

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Nano-imprint lithography for single electron tunneling devices using novel mold

A novel mold fabrication method for nano-imprint lithography is newly proposed. Utilizing anisotropic wet chemical etching, the mold formation having narrow gaps is principally confirmed, which would be useful for fabrication of tunneling barriers for single electron devices by imprinting lithography.

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Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference

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