{"title":"从铝基技术过渡到铜基技术时片上电感的影响","authors":"Tom Chen","doi":"10.1109/ISQED.2001.915223","DOIUrl":null,"url":null,"abstract":"How does on-chip inductance impact timing closure when transitioning from Al to Cu based technology? This paper presents some experimental results based on a Al-based 0.18 /spl mu/m CMOS process and a Cu-based 0.13 /spl mu/m CMOS process. The results show that the impact of on-chip inductance is slightly more on the Cu-based 0.13 /spl mu/m process than on the Al-based 0.18 /spl mu/m process. Furthermore, the results demonstrate that on-chip inductance plays an insignificant role if we assume a perfect power supply network around the interconnect routes.","PeriodicalId":110117,"journal":{"name":"Proceedings of the IEEE 2001. 2nd International Symposium on Quality Electronic Design","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impact of on-chip inductance when transitioning from Al to Cu based technology\",\"authors\":\"Tom Chen\",\"doi\":\"10.1109/ISQED.2001.915223\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"How does on-chip inductance impact timing closure when transitioning from Al to Cu based technology? This paper presents some experimental results based on a Al-based 0.18 /spl mu/m CMOS process and a Cu-based 0.13 /spl mu/m CMOS process. The results show that the impact of on-chip inductance is slightly more on the Cu-based 0.13 /spl mu/m process than on the Al-based 0.18 /spl mu/m process. Furthermore, the results demonstrate that on-chip inductance plays an insignificant role if we assume a perfect power supply network around the interconnect routes.\",\"PeriodicalId\":110117,\"journal\":{\"name\":\"Proceedings of the IEEE 2001. 2nd International Symposium on Quality Electronic Design\",\"volume\":\"55 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-03-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2001. 2nd International Symposium on Quality Electronic Design\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISQED.2001.915223\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2001. 2nd International Symposium on Quality Electronic Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2001.915223","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
当从铝基技术过渡到铜基技术时,片上电感如何影响时序闭合?本文介绍了基于铝的0.18 /spl μ m CMOS工艺和基于铜的0.13 /spl μ m CMOS工艺的一些实验结果。结果表明,片上电感对cu基0.13 /spl mu/m工艺的影响略大于al基0.18 /spl mu/m工艺的影响。此外,研究结果还表明,如果互连线路周围有一个完善的供电网络,片上电感的作用是微不足道的。
Impact of on-chip inductance when transitioning from Al to Cu based technology
How does on-chip inductance impact timing closure when transitioning from Al to Cu based technology? This paper presents some experimental results based on a Al-based 0.18 /spl mu/m CMOS process and a Cu-based 0.13 /spl mu/m CMOS process. The results show that the impact of on-chip inductance is slightly more on the Cu-based 0.13 /spl mu/m process than on the Al-based 0.18 /spl mu/m process. Furthermore, the results demonstrate that on-chip inductance plays an insignificant role if we assume a perfect power supply network around the interconnect routes.