高反向基极-集电极电压下InP/InGaAs双异质结双极晶体管射频和噪声特性的退化

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI:10.1109/IPFA.2009.5232730

H. Wang, C. Ng

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引用次数: 1

摘要

探讨了热载子诱导降解对InP/InGaAs双异质结双极晶体管射频性能的影响。射频性能的下降比直流性能的下降更为显著。我们发现，基本外源电阻的增加可能是根本原因。提出了一种新的降解机理。

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Degradation of RF and noise characteristics of InP/InGaAs double heterojunction bipolar transistors under high reverse base-collector voltage

The effect of hot carrier induced degradation on RF performance of InP/InGaAs double heterojunction bipolar transistors (DHBTs) is explored. Degradation of RF performance is more significant than that of DC performance. We found that the increase in base extrinsic resistance could be the root cause. A new degradation mechanism is proposed.

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2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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