S. Navarro, K. Lee, C. Márquez, C. Navarro, M. Parihar, H. Park, P. Galy, M. Bawedin, F. Gámiz, S. Cristoloveanu
{"title":"薄氧化Z2-FET DRAM电池的评价","authors":"S. Navarro, K. Lee, C. Márquez, C. Navarro, M. Parihar, H. Park, P. Galy, M. Bawedin, F. Gámiz, S. Cristoloveanu","doi":"10.1109/ULIS.2018.8354342","DOIUrl":null,"url":null,"abstract":"Advanced 28 nm node FDSOI Z2-FETs with thin top-gate insulator are characterized as capacitor-less DRAM cells. Results demonstrate effective Z2-FET memory behavior for narrow devices (below 1 μm). As compared with thicker gate oxide Z2-FETs, thinning the insulator yields lower performance in terms of retention, variability and stability of the logic states during holding.","PeriodicalId":383788,"journal":{"name":"2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)","volume":"35 14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Evaluation of thin-oxide Z2-FET DRAM cell\",\"authors\":\"S. Navarro, K. Lee, C. Márquez, C. Navarro, M. Parihar, H. Park, P. Galy, M. Bawedin, F. Gámiz, S. Cristoloveanu\",\"doi\":\"10.1109/ULIS.2018.8354342\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Advanced 28 nm node FDSOI Z2-FETs with thin top-gate insulator are characterized as capacitor-less DRAM cells. Results demonstrate effective Z2-FET memory behavior for narrow devices (below 1 μm). As compared with thicker gate oxide Z2-FETs, thinning the insulator yields lower performance in terms of retention, variability and stability of the logic states during holding.\",\"PeriodicalId\":383788,\"journal\":{\"name\":\"2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)\",\"volume\":\"35 14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-03-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ULIS.2018.8354342\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULIS.2018.8354342","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Advanced 28 nm node FDSOI Z2-FETs with thin top-gate insulator are characterized as capacitor-less DRAM cells. Results demonstrate effective Z2-FET memory behavior for narrow devices (below 1 μm). As compared with thicker gate oxide Z2-FETs, thinning the insulator yields lower performance in terms of retention, variability and stability of the logic states during holding.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
