Xiaozhi Kang, Xiaoxu Kang, Zijian Zhao, Jingxiu Ding, Yi Hu, Dapeng Xu, Qingqing Sun, D. Zhang
{"title":"基于带隙电路设计结构简单的低差稳压器,具有良好的高频PSRR性能","authors":"Xiaozhi Kang, Xiaoxu Kang, Zijian Zhao, Jingxiu Ding, Yi Hu, Dapeng Xu, Qingqing Sun, D. Zhang","doi":"10.1109/ASICON47005.2019.8983446","DOIUrl":null,"url":null,"abstract":"This paper describes an op-amp free low-dropout regulator with a high PSRR over a broad frequency range. The design merges the high PSRR bandgap and LDO without op-amp involved and thus greatly reduces the silicon area. As no high impedence node engaged in the circuit, it is easy to achieve a good high frequency PSRR performance by using a locally regulated supply voltage. The op-amp free LDO is then developed by embedding replica technique in the bandgap. The circuit is evaluated with HHGrace 0.35µm CMOS technology. It generates a reference voltage of 1.152V and has a temperature coefficient of 0.01mV/K at 27C. LDO has a PSRR of −96dB at DC and still −48.5dB at 1MHz.","PeriodicalId":319342,"journal":{"name":"2019 IEEE 13th International Conference on ASIC (ASICON)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Low-Dropout Regulator design with a simple structure for good high frequency PSRR performance based on Bandgap Circuit\",\"authors\":\"Xiaozhi Kang, Xiaoxu Kang, Zijian Zhao, Jingxiu Ding, Yi Hu, Dapeng Xu, Qingqing Sun, D. Zhang\",\"doi\":\"10.1109/ASICON47005.2019.8983446\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes an op-amp free low-dropout regulator with a high PSRR over a broad frequency range. The design merges the high PSRR bandgap and LDO without op-amp involved and thus greatly reduces the silicon area. As no high impedence node engaged in the circuit, it is easy to achieve a good high frequency PSRR performance by using a locally regulated supply voltage. The op-amp free LDO is then developed by embedding replica technique in the bandgap. The circuit is evaluated with HHGrace 0.35µm CMOS technology. It generates a reference voltage of 1.152V and has a temperature coefficient of 0.01mV/K at 27C. LDO has a PSRR of −96dB at DC and still −48.5dB at 1MHz.\",\"PeriodicalId\":319342,\"journal\":{\"name\":\"2019 IEEE 13th International Conference on ASIC (ASICON)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 13th International Conference on ASIC (ASICON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASICON47005.2019.8983446\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 13th International Conference on ASIC (ASICON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASICON47005.2019.8983446","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low-Dropout Regulator design with a simple structure for good high frequency PSRR performance based on Bandgap Circuit
This paper describes an op-amp free low-dropout regulator with a high PSRR over a broad frequency range. The design merges the high PSRR bandgap and LDO without op-amp involved and thus greatly reduces the silicon area. As no high impedence node engaged in the circuit, it is easy to achieve a good high frequency PSRR performance by using a locally regulated supply voltage. The op-amp free LDO is then developed by embedding replica technique in the bandgap. The circuit is evaluated with HHGrace 0.35µm CMOS technology. It generates a reference voltage of 1.152V and has a temperature coefficient of 0.01mV/K at 27C. LDO has a PSRR of −96dB at DC and still −48.5dB at 1MHz.