多金属靶反应溅射外延生长铁电Pb(Zr/sub 0.9/Ti/sub 0.1/)O/sub 3/薄膜

[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics Pub Date : 1990-06-06 DOI:10.1109/ISAF.1990.200344

T. Okamura, M. Adachi, T. Shiosaki, A. Kawabata

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引用次数: 0

摘要

通过反应溅射，在镀铂蓝宝石衬底上成功制备了铁电外延Pb(Zr/sub 0.9/Ti/sub 0.1/)O/sub 3/薄膜。在600 ~ 620℃的衬底温度下外延生长出具有钙钛矿结构的薄膜。Pb(Zr/sub 0.9/Ti/sub 0.1/)O/sub 3/薄膜的结晶度取决于衬底温度和作为底电极的铂薄膜的结晶度。测量了0.75 μ m厚薄膜的残余极化和矫顽力场，分别为13.9 μ C/cm/sup 2/和60.0 kV/cm。

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Epitaxial growth of ferroelectric Pb(Zr/sub 0.9/Ti/sub 0.1/)O/sub 3/ films by reactive sputtering of multi metal target

Ferroelectric epitaxial Pb(Zr/sub 0.9/Ti/sub 0.1/)O/sub 3/ thin films have been successfully obtained on platinum-coated sapphire substrates by reactive sputtering of the multimetal target. The films with a perovskite structure have been epitaxially grown at substrate temperatures of 600-620 degrees C. The crystallinity of the Pb(Zr/sub 0.9/Ti/sub 0.1/)O/sub 3/ film depended on the substrate temperature and the crystallinity of the platinum film used as a bottom electrode. The remanent polarization and the coercive field of a 0.75- mu m-thick film were measured as 13.9 mu C/cm/sup 2/ and 60.0 kV/cm, respectively.<>

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[Proceedings] 1990 IEEE 7th International Symposium on Applications of Ferroelectrics

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