采用16nm CMOS技术跨功率域内部功率节点的CDM保护设计

2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2016-09-01 DOI:10.1109/EOSESD.2016.7592557

Koki Narita, M. Okushima

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引用次数: 2

摘要

本文提出了一种跨域接口电路的CDM保护设计，在模拟电路的内部电源节点和数字GND节点之间采用内部交叉钳作为分压器。所提出的保护电路满足16nm FinFET大型封装IC对高CDM电流的要求。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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CDM protection design using internal power node for cross power domain in 16nm CMOS technology

This paper presents a CDM protection design for cross-domain interface circuits using an internal cross clamp as voltage divider between the internal power supply node of analog circuits and the digital GND node. The proposed protection circuit meets high CDM current request from large packaged IC with 16nm FinFET.

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来源期刊

2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)

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