基于工业标准ASM GaN模型的GaN hemt非线性射频建模(特邀)

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI:10.1109/BCICTS.2018.8550974

S. Khandelwal, Y. Chauhan, Jason Hodges, S. Albahrani

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引用次数: 6

摘要

在本文中，我们提出了基于氮化镓的高电子迁移率晶体管(GaN hemt)的非线性射频(RF)建模，使用最近选择的工业标准的基于表面电位的GaN hemt Advance SPICE模型(ASM)。我们从用户的角度描述了ASM GaN模型的关键特征。给出了GaN hemt从直流到小信号再到大信号的非线性RF建模流程。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Non-Linear RF Modeling of GaN HEMTs with Industry Standard ASM GaN Model (Invited)

In this paper, we present nonlinear radiofrequency (RF) modeling of Gallium Nitride based high electron mobility transistors (GaN HEMTs) using recently selected industry standard surface-potential-based Advance SPICE Model (ASM) for GaN HEMTs. We describe the key features of ASM GaN model from user perspective. Non-linear RF modeling flow from DC to small-signal to large-signal characteristics is presented for GaN HEMTs.

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来源期刊

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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