具有小寄生电感的弯梳式电容器

2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302) Pub Date : 2002-06-13 DOI:10.1109/VLSIC.2002.1015033

Akira Imamura, M. Fujishima, K. Hoh

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引用次数: 5

摘要

基于标准的数字CMOS技术，提出了一种寄生电感小的新型金属-金属电容器——弯梳电容器(BCC)。BCC自谐振频率高，适用于高频电路。从几何尺寸的分析评价电容也提出了。采用0.13-/spl mu/m铜线CMOS工艺，BCC为0.85 pF，尺寸为10 /spl mu/m /倍/ 100 /spl mu/m的自共振频率估计为374 GHz。该频率比传统梳状电容器估计的频率高约六倍。

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Bending-comb capacitor with a small parasitic inductance

A new metal-metal capacitor with a small parasitic inductance, named a bending-comb capacitor (BCC), is proposed based on a standard digital CMOS technology. The BCC is applicable to high frequency circuits due to its high self-resonance frequency. An analytical evaluation of the capacitance from the geometry size is also presented. The self-resonance frequency of the BCC of 0.85 pF with the size of 10 /spl mu/m /spl times/ 100 /spl mu/m is estimated as 374 GHz with a 0.13-/spl mu/m Cu-wiring CMOS process. This frequency is about six times higher than that estimated by the conventional comb capacitor.

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2002 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.02CH37302)

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