AlN纳米板谐振腔体积缩放对品质因子的影响

Z. Qian, Y. Hui, M. Rinaldi
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引用次数: 5

摘要

本文报道了氮化铝(AlN)纳米板谐振器中体积缩放对质量因子影响的实验研究。我们首次证明,当AlN纳米板的厚度从200 nm缩放到50 nm时,可以实现高频(~ 1 GHz)横向伸缩振动模式的高效压电转导和接近900的高品质因子。此外,我们还通过实验证明,AlN板厚度的大大减小可以使器件面积缩小到32×28 μm2。我们表明,当谐振器的厚度缩放到50纳米时,器件横向尺寸的这种积极缩放产生更高的质量因子。此外,我们通过实验证明,在平面(非图案化)底电极上沉积这种超薄AlN薄膜对于实现高质量因数的谐振器是理想的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effects of volume scaling in AlN nano plate resonators on quality factor
This paper reports on the experimental study of the effects of volume scaling in aluminum nitride (AlN) nano plate resonators on quality factor. For the first time, we show that efficient piezoelectric transduction of a high frequency (~ 1 GHz) lateral-extensional mode of vibration and a high quality factor approaching 900 can be achieved when the thickness of the AlN nano plate is scaled from 200 nm to 50 nm. Furthermore, we experimentally demonstrate that the greatly reduced thickness of the AlN plate enables the scaling of device area down to 32×28 μm2. We show that such aggressive scaling of the device lateral dimensions yields higher quality factor when the thickness of the resonator is scaled to 50 nm. In addition, we experimentally demonstrate that the deposition of such ultrathin AlN film on a plane (not patterned) bottom electrode is desirable for the implementation of resonators with high quality factors.
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