新型CMOS读出电路图像传感器ESD可靠性分析

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI:10.1109/IPFA.2009.5232613

Y. Ye, J. Han, J. Li, G. Zhan, R. Zhu, F. Guo

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引用次数: 0

摘要

针对一种新型量子点-量子阱(QDs-QW)混合异质结构图像传感器的特点，精心设计了几种应用于新型CMOS技术图像传感器的读出集成电路(ROIC)静电放电(ESD)保护方法。本文对实验结果进行了介绍和分析。

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Reliability analysis of ESD for novel image sensor with CMOS readout circuit

According to the characterization of a new image sensor with quantum dots-quantum well (QDs-QW) hybrid hetero-structure, several electrostatic discharge (ESD) protection approaches for readout integrated circuits (ROIC) applied to novel image sensor with state-of-the-art CMOS technology were carefully designed. The results were presented and analyzed in this paper.

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2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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