高速级联码传感方案1.0 V接触编程掩码ROM

1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326) Pub Date : 1999-06-17 DOI:10.1109/VLSIC.1999.797248

R. Sasagawa, I. Fukushi, M. Hamaminato, S. Kawashima

{"title":"高速级联码传感方案1.0 V接触编程掩码ROM","authors":"R. Sasagawa, I. Fukushi, M. Hamaminato, S. Kawashima","doi":"10.1109/VLSIC.1999.797248","DOIUrl":null,"url":null,"abstract":"This paper proposes a high-speed single end sensing scheme. A low-voltage contact-programming mask ROM was designed which utilizes a cascode sense amplifier (S/A). A dummy S/A controls the bit-line pre-charging period to operate the read S/A quickly in spite of high programmed-data-dependence of the bit-line capacitance. The word-line has branches to enhance the cell current with little increase in area. A demonstrated 4 K/spl times/8 bit ROM operates with an access time of 5.7 ns and power of 2.2 mW at 1.0 V, 100 MHz, and 25/spl deg/C.","PeriodicalId":433264,"journal":{"name":"1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)","volume":"66 2-3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":"{\"title\":\"High-speed cascode sensing scheme for 1.0 V contact-programming mask ROM\",\"authors\":\"R. Sasagawa, I. Fukushi, M. Hamaminato, S. Kawashima\",\"doi\":\"10.1109/VLSIC.1999.797248\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper proposes a high-speed single end sensing scheme. A low-voltage contact-programming mask ROM was designed which utilizes a cascode sense amplifier (S/A). A dummy S/A controls the bit-line pre-charging period to operate the read S/A quickly in spite of high programmed-data-dependence of the bit-line capacitance. The word-line has branches to enhance the cell current with little increase in area. A demonstrated 4 K/spl times/8 bit ROM operates with an access time of 5.7 ns and power of 2.2 mW at 1.0 V, 100 MHz, and 25/spl deg/C.\",\"PeriodicalId\":433264,\"journal\":{\"name\":\"1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)\",\"volume\":\"66 2-3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-06-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"22\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.1999.797248\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1999.797248","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 22

摘要

本文提出了一种高速单端传感方案。设计了一种采用级联码感测放大器(S/A)的低压接触编程掩模ROM。虚拟S/A控制位线预充电周期，使读S/A快速运行，尽管位线电容对程序数据有很高的依赖性。字线有分支，以增强细胞电流，但面积几乎没有增加。所演示的4 K/spl次/8位ROM在1.0 V, 100 MHz和25/spl度/C下工作，访问时间为5.7 ns，功率为2.2 mW。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

High-speed cascode sensing scheme for 1.0 V contact-programming mask ROM

This paper proposes a high-speed single end sensing scheme. A low-voltage contact-programming mask ROM was designed which utilizes a cascode sense amplifier (S/A). A dummy S/A controls the bit-line pre-charging period to operate the read S/A quickly in spite of high programmed-data-dependence of the bit-line capacitance. The word-line has branches to enhance the cell current with little increase in area. A demonstrated 4 K/spl times/8 bit ROM operates with an access time of 5.7 ns and power of 2.2 mW at 1.0 V, 100 MHz, and 25/spl deg/C.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326)

自引率

0.00%

发文量