{"title":"基于CMOS的c波段a类功率放大器设计","authors":"Priti Gupta, Nigidita Pradhan, S. K. Jana","doi":"10.1109/ISDCS.2018.8379625","DOIUrl":null,"url":null,"abstract":"This work presents the design of 8 GHZ CMOS based Class-A Power Amplifier (PA) with synthesized Transformer Matching Network (TMNs). The circuit is implemented in 180nm process technology using semiconductor laboratory Process Design KIT(SCL PDKs). Transformer based Matching Network is used to provide matching at the output side of the C-Band ∼ 8GHz class-A power amplifier. The optimized simulated results shows that power added efficiency is 22.74 %, power gain is 32.77 dBm, total harmonic distortion (THD) is 11.40 %, Compression Point 1.77 dBmand IPN Curves2.016 dBm. This optimized results can be used in transreceiver for High speed communication systems.","PeriodicalId":374239,"journal":{"name":"2018 International Symposium on Devices, Circuits and Systems (ISDCS)","volume":"33 Suppl 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Design of CMOS based Class-A Power Amplifier for C-Band applications\",\"authors\":\"Priti Gupta, Nigidita Pradhan, S. K. Jana\",\"doi\":\"10.1109/ISDCS.2018.8379625\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents the design of 8 GHZ CMOS based Class-A Power Amplifier (PA) with synthesized Transformer Matching Network (TMNs). The circuit is implemented in 180nm process technology using semiconductor laboratory Process Design KIT(SCL PDKs). Transformer based Matching Network is used to provide matching at the output side of the C-Band ∼ 8GHz class-A power amplifier. The optimized simulated results shows that power added efficiency is 22.74 %, power gain is 32.77 dBm, total harmonic distortion (THD) is 11.40 %, Compression Point 1.77 dBmand IPN Curves2.016 dBm. This optimized results can be used in transreceiver for High speed communication systems.\",\"PeriodicalId\":374239,\"journal\":{\"name\":\"2018 International Symposium on Devices, Circuits and Systems (ISDCS)\",\"volume\":\"33 Suppl 1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-03-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Symposium on Devices, Circuits and Systems (ISDCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDCS.2018.8379625\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Symposium on Devices, Circuits and Systems (ISDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDCS.2018.8379625","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design of CMOS based Class-A Power Amplifier for C-Band applications
This work presents the design of 8 GHZ CMOS based Class-A Power Amplifier (PA) with synthesized Transformer Matching Network (TMNs). The circuit is implemented in 180nm process technology using semiconductor laboratory Process Design KIT(SCL PDKs). Transformer based Matching Network is used to provide matching at the output side of the C-Band ∼ 8GHz class-A power amplifier. The optimized simulated results shows that power added efficiency is 22.74 %, power gain is 32.77 dBm, total harmonic distortion (THD) is 11.40 %, Compression Point 1.77 dBmand IPN Curves2.016 dBm. This optimized results can be used in transreceiver for High speed communication systems.
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