用于5G波束形成系统的ka波段4-ch双向CMOS T/R芯片组

2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2017-06-01 DOI:10.1109/RFIC.2017.7969012

Jang-hoon Han, Jinhyun Kim, Jeongsoo Park, Jeong-Deok Kim

{"title":"用于5G波束形成系统的ka波段4-ch双向CMOS T/R芯片组","authors":"Jang-hoon Han, Jinhyun Kim, Jeongsoo Park, Jeong-Deok Kim","doi":"10.1109/RFIC.2017.7969012","DOIUrl":null,"url":null,"abstract":"This paper presents a Ka-band 4-channel bi-directional T/R chipset in 65 nm CMOS technology for 5G beamforming system. The proposed T/R chipset can provide bi-directional operation with moderate gain and dual polarization. Each channel consists of bi-directional gain blocks, a 5-bit step attenuator and a 5-bit phase shifter including tuning bits. The phase and attenuation coverage are 348° with the LSB of 11.25° and 31 dB with the LSB of 1 dB, respectively. The gain of 13 dB (Tx mode) and 6 dB (Rx mode) are achieved at 28 GHz including the 4-way power divider/combiner.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"206 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"A Ka-band 4-ch bi-directional CMOS T/R chipset for 5G beamforming system\",\"authors\":\"Jang-hoon Han, Jinhyun Kim, Jeongsoo Park, Jeong-Deok Kim\",\"doi\":\"10.1109/RFIC.2017.7969012\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a Ka-band 4-channel bi-directional T/R chipset in 65 nm CMOS technology for 5G beamforming system. The proposed T/R chipset can provide bi-directional operation with moderate gain and dual polarization. Each channel consists of bi-directional gain blocks, a 5-bit step attenuator and a 5-bit phase shifter including tuning bits. The phase and attenuation coverage are 348° with the LSB of 11.25° and 31 dB with the LSB of 1 dB, respectively. The gain of 13 dB (Tx mode) and 6 dB (Rx mode) are achieved at 28 GHz including the 4-way power divider/combiner.\",\"PeriodicalId\":349922,\"journal\":{\"name\":\"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"volume\":\"206 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2017.7969012\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2017.7969012","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 16

摘要

本文提出了一种用于5G波束形成系统的65纳米CMOS技术的ka波段4通道双向收发芯片组。所提出的T/R芯片组可以实现中等增益和双极化的双向工作。每个通道由双向增益块，一个5位步进衰减器和一个5位移相器(包括调谐位)组成。相位覆盖348°，LSB为11.25°，衰减覆盖31 dB, LSB为1 dB。在包括4路功率分配器/合并器在内的28 GHz下实现了13 dB (Tx模式)和6 dB (Rx模式)的增益。

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A Ka-band 4-ch bi-directional CMOS T/R chipset for 5G beamforming system

This paper presents a Ka-band 4-channel bi-directional T/R chipset in 65 nm CMOS technology for 5G beamforming system. The proposed T/R chipset can provide bi-directional operation with moderate gain and dual polarization. Each channel consists of bi-directional gain blocks, a 5-bit step attenuator and a 5-bit phase shifter including tuning bits. The phase and attenuation coverage are 348° with the LSB of 11.25° and 31 dB with the LSB of 1 dB, respectively. The gain of 13 dB (Tx mode) and 6 dB (Rx mode) are achieved at 28 GHz including the 4-way power divider/combiner.

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2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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