{"title":"微量分析的新型样品制备","authors":"R. Belcher, G. P. Hart, W. R. Wade","doi":"10.1109/IRPS.1984.362024","DOIUrl":null,"url":null,"abstract":"Five sample-preparation techniques for failure analysis and process evaluation of integrated circuits by electron microscopy are described. These novel yet simple techniques, each with several applications, provide valuable device data for personnel in various aspects of semiconductor reliability. Methods described include effective deglassivation techniques, data-filled cross-sectional preparations, an accurate measurement system for critical dimension features, a simple backside etch procedure to prepare TEM (Transmission Electron Microscopy) and AES (Auger Electron Spectroscopy) samples, and an etchback technique for metal step coverage reliability.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"130 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1984-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Novel Sample Preparations for Microanalysis\",\"authors\":\"R. Belcher, G. P. Hart, W. R. Wade\",\"doi\":\"10.1109/IRPS.1984.362024\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Five sample-preparation techniques for failure analysis and process evaluation of integrated circuits by electron microscopy are described. These novel yet simple techniques, each with several applications, provide valuable device data for personnel in various aspects of semiconductor reliability. Methods described include effective deglassivation techniques, data-filled cross-sectional preparations, an accurate measurement system for critical dimension features, a simple backside etch procedure to prepare TEM (Transmission Electron Microscopy) and AES (Auger Electron Spectroscopy) samples, and an etchback technique for metal step coverage reliability.\",\"PeriodicalId\":326004,\"journal\":{\"name\":\"22nd International Reliability Physics Symposium\",\"volume\":\"130 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1984-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"22nd International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1984.362024\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"22nd International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1984.362024","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Five sample-preparation techniques for failure analysis and process evaluation of integrated circuits by electron microscopy are described. These novel yet simple techniques, each with several applications, provide valuable device data for personnel in various aspects of semiconductor reliability. Methods described include effective deglassivation techniques, data-filled cross-sectional preparations, an accurate measurement system for critical dimension features, a simple backside etch procedure to prepare TEM (Transmission Electron Microscopy) and AES (Auger Electron Spectroscopy) samples, and an etchback technique for metal step coverage reliability.
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