单光子雪崩探测器在180纳米标准CMOS技术

2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS) Pub Date : 2015-06-07 DOI:10.1109/NEWCAS.2015.7182011

Imane Malass, W. Uhring, J. L. Normand, N. Dumas, F. Dadouche

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引用次数: 7

摘要

本文介绍了一种采用180nm标准CMOS图像传感器技术制作的单光子雪崩探测器的性能特征。在5 μm和40 μm之间的8种不同直径下实现的SPAD在15°C下的DCR低于10 kHz，具有低的后脉冲概率(300 mV时为0.2%)，良好的光探测效率(20%)和非常好的时间分辨率(450 nm时为80 ps)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A single photon avalanche detector in a 180 nm standard CMOS technology

We present the performance characteristics of a Single Photon Avalanche Detector fabricated in a 180 nm standard CMOS image sensor technology. The SPAD implemented in 8 different diameters between 5 μm and 40 μm shows a DCR below 10 kHz at 15°C with a low afterpulsing probability (0.2% at 300 mV), a good photodetection efficiency (20%) and a very good time resolution (80 ps at 450 nm).

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2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS)

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