Анатолій Олександрович Дружинін, І. Й. Мар’ямова, О. П. Кутраков, Н. С. Лях-Кагуй
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THE INFLUENCE OF UNIAXIAL STRAIN AND HYDROSTATIC PRESSURE ON PROPERTIES OF InSb THIN LAYERS
Piezoresistive characteristics of undoped and doped by tellurium with different concentration InSb thin layers were studied in wide range of strain (ε = ± 1.3 × 10-3 rel. un.) and temperature (180 ÷ + 100) °С. The highest values of the gauge factor were obtained in n-type conductivity InSb thin layers doped by tellurium to concentration of (4 ÷ 7) × 1016 см-3. Sensitive elements of strain gauges could be created on the basis of such layers. The influence of hydrostatic pressure up to 5000 bar on electrophysical properties of undoped and doped by tellurium and zinc InSb thin layers were also studied. The values of the hydrostatic pressure coefficients for these layers and their temperature dependences were determined in the temperature range (75 ÷ + 80) °С. The greatest sensitivity to hydrostatic pressure (K20°С ≈ 46) was revealed in InSb samples doped with zinc. Recommendations for the use of InSb thin layers as sensitive elements of pressure sensors were given.
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