用于GSI的晶圆级微流控冷却互连

Bing Dang, P. Joseph, M. Bakir, T. Spencer, P. Kohl, J. Meindl
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引用次数: 43

摘要

我们提出了一种新的CMOS兼容方法,在晶圆级上使用自旋牺牲聚合物材料来制造片上微流控冷却通道。采用高粘度牺牲聚合物,通过一次自旋涂覆,成功地填满了IC晶圆背面刻蚀的深沟(>100 /spl mu/m)。多孔涂层材料允许聚合物分解形成封闭的微通道。通过芯片孔和聚合物管作为入口/出口互连。描述了不同的通道阵列设计,并估计了热流密度为100 W/cm/sup 2/时的压降。由此产生的冷却方案提供了一个简单而紧凑的解决方案,将冷却液直接转移到GSI芯片中,并与倒装芯片封装完全兼容。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Wafer-level microfluidic cooling interconnects for GSI
We present a novel CMOS compatible approach to fabricate on-chip microfluidic cooling channels using a spin-on sacrificial polymer material at wafer level. Deep trenches (>100 /spl mu/m) etched into the backside of an IC wafer were successfully filled up by a single spin coating step with a high viscosity sacrificial polymer. A porous overcoat material allows the decomposition of the polymer to form enclosed microchannels. Through chip holes and polymer pipes are used as the inlet/outlet interconnects. Different channel array designs were described and the pressure drop was estimated for a heat flux of 100 W/cm/sup 2/ with DI water flow rate. The resulting cooling scheme offers a simple and compact solution to transfer cooling liquid directly into a GSI chip and is fully compatible with flip-chip packaging.
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