S. Chikaki, E. Soda, A. Gawase, T. Suzuki, Y. Kawashima, N. Oda, S. Saito
{"title":"采用先进可扩展多孔二氧化硅(k=2.1)的6层超低k/Cu双大马士革互连的封装特性","authors":"S. Chikaki, E. Soda, A. Gawase, T. Suzuki, Y. Kawashima, N. Oda, S. Saito","doi":"10.1109/IITC.2009.5090355","DOIUrl":null,"url":null,"abstract":"To enhance the process damage tolerance, a 2nd generation scalable porous silica (k=2.1) has been developed by reducing pore-size to 2/3. Using this new low-k film, hybrid dual-damascene interconnects were successfully fabricated with low thermal stress and high adhesion strength. Packaging performance of the six-layered multilevel interconnects was also evaluated with wire-bonding and temperature-cycle tests.","PeriodicalId":301012,"journal":{"name":"2009 IEEE International Interconnect Technology Conference","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Packaging characteristics of 6-layer ultra low-k/Cu dual damascene interconnect featuring advanced scalable porous silica (k=2.1)\",\"authors\":\"S. Chikaki, E. Soda, A. Gawase, T. Suzuki, Y. Kawashima, N. Oda, S. Saito\",\"doi\":\"10.1109/IITC.2009.5090355\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To enhance the process damage tolerance, a 2nd generation scalable porous silica (k=2.1) has been developed by reducing pore-size to 2/3. Using this new low-k film, hybrid dual-damascene interconnects were successfully fabricated with low thermal stress and high adhesion strength. Packaging performance of the six-layered multilevel interconnects was also evaluated with wire-bonding and temperature-cycle tests.\",\"PeriodicalId\":301012,\"journal\":{\"name\":\"2009 IEEE International Interconnect Technology Conference\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE International Interconnect Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2009.5090355\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2009.5090355","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
To enhance the process damage tolerance, a 2nd generation scalable porous silica (k=2.1) has been developed by reducing pore-size to 2/3. Using this new low-k film, hybrid dual-damascene interconnects were successfully fabricated with low thermal stress and high adhesion strength. Packaging performance of the six-layered multilevel interconnects was also evaluated with wire-bonding and temperature-cycle tests.