Pulse transmission through controllable semiconductor photonic band gap structure

Recently a mechanism of the light-by-light control was based on changing the refractive index of the narrow-band layers in semiconductor photonic band gap structures (PBGS). This changing is caused by the contribution of the nonequilibrium charge carriers generated by the controlling radiation. It was shown that this mechanism can be efficient if an optimal controlling light wavelength is taken near the proper absorption edge of the narrow-band semiconductor layers, since the little changes of the layers refractive indices at the band gap edge of the PBGS cause essential change of the transmission characteristics. In this paper non-stationary processes have been considered. The dynamics of the formation of the controlled light pulses in accordance with power of the controlling light, lifetime of the carriers and periods of the structure is studied.