湿法化学蚀刻在带外露衬垫的器件上有效制备背面样品的表征

Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2014-06-01 DOI:10.1109/IPFA.2014.6898186

Andrew C. Sabate, Rowin V. Galarce

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引用次数: 1

摘要

随着多金属化层和铜线键合器件集成电路设计的日益复杂，大多数情况下，背面故障隔离是一种较好的方法。本文评价了湿化学背面样品制备作为传统研磨/抛光背面样品制备的替代方法。

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Characterization of wet chemical etching for effective backside sample preparation on devices with exposed pads

With the growing complexity of Integrated Circuit (IC) design having multiple metallization layers and copper wire bonded devices, most of the time backside fault isolation is a better approach. This paper evaluated wet chemical backside sample preparation as an alternative method for the traditional milling/polishing backside sample preparation.

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Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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