{"title":"具有高接收灵敏度的Ga0.47In0.53As/InP光导探测器","authors":"C. Y. Chen, B. Kasper, H. Cox","doi":"10.1364/igwo.1984.tha4","DOIUrl":null,"url":null,"abstract":"We report a high-sensitivity Ga0.47In0.53As photoconductive detector (PCD) prepared by trichloride vapor phase epitaxy. This detector shows a receiver sensitivity better than that of a Ga0.47In0.53As pin photodiode at 1Gb/s. This study indicates that photoconductive detectors are promising candidates for applications in high data rate, long wavelength lightwave communications.","PeriodicalId":208165,"journal":{"name":"Seventh Topical Meeting on Integrated and Guided-Wave Optics","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Ga0.47In0.53As/InP Photoconductive Detector with High Receiver Sensitivities\",\"authors\":\"C. Y. Chen, B. Kasper, H. Cox\",\"doi\":\"10.1364/igwo.1984.tha4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report a high-sensitivity Ga0.47In0.53As photoconductive detector (PCD) prepared by trichloride vapor phase epitaxy. This detector shows a receiver sensitivity better than that of a Ga0.47In0.53As pin photodiode at 1Gb/s. This study indicates that photoconductive detectors are promising candidates for applications in high data rate, long wavelength lightwave communications.\",\"PeriodicalId\":208165,\"journal\":{\"name\":\"Seventh Topical Meeting on Integrated and Guided-Wave Optics\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Seventh Topical Meeting on Integrated and Guided-Wave Optics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/igwo.1984.tha4\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Seventh Topical Meeting on Integrated and Guided-Wave Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/igwo.1984.tha4","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ga0.47In0.53As/InP Photoconductive Detector with High Receiver Sensitivities
We report a high-sensitivity Ga0.47In0.53As photoconductive detector (PCD) prepared by trichloride vapor phase epitaxy. This detector shows a receiver sensitivity better than that of a Ga0.47In0.53As pin photodiode at 1Gb/s. This study indicates that photoconductive detectors are promising candidates for applications in high data rate, long wavelength lightwave communications.
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