采用低温工艺制备了一种适用于12英寸晶圆的15V工作浅沟IGBT(ST-IGBT)

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI:10.1109/ISPSD57135.2023.10147646

Masahiro Tanaka, N. Abe, A. Nakagawa

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引用次数: 0

摘要

本文提出了一种浅沟槽IGBT (ST -IGBT)及其制作工艺。它设计用于15V的栅极操作，与传统的igbt相同。电池由离子注入和快速热退火(RTA)形成的浅沟槽栅MOS结构和浅掺杂层组成。边缘终端结构是由许多浅flr组成的。与传统的igbt相比，优化后的电池设计将V ce(sat)降低了0.2V。

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A 15V operated Shallow Trench IGBT(ST-IGBT) fabricated by low temperature process and optimized for 12inch wafers

In this paper, we propose shallow trench IGBT (ST -IGBT) and its fabrication process. It is designed for 15V of gate operation, as is the same as conventional IGBTs. The cell is consist of shallow trench gate MOS structure and shallow doping layers, formed by ion implantation and RTA (Rapid Thermal Anneal). The edge termination structure is composed by many shallow FLRs. The optimized cell design reduces V ce(sat) by 0.2V, compared with conventional IGBTs.

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2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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