用于汽车雷达的76- 81 ghz封装单芯片收发器

Takeji Fujibayashi, Y. Takeda, Weihu Wang, Yi-Shin Yeh, Willem Stapelbroek, S. Takeuchi, B. Floyd
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引用次数: 11

摘要

本文介绍了一种采用SiGe BiCMOS技术实现的倒装封装76- 81 ghz收发器芯片,用于远程和短程汽车雷达应用。该单片机包含一个双通道发射器,每通道饱和输出功率+ 18dbm;具有×4乘法器的LO链,参考77 ghz载波的1 mhz偏移量时具有-100 dbc /Hz相位噪声的宽带20 ghz压控振荡器,以及除以4的预分频器;六通道接收机,噪声系数为10 ~ 11db,转换增益为14 ~ 15db,未封装时输入P1dB为+ 1dbm。在80ghz时,通过BGA封装的互连损耗为1.5 ~ 2db。内置自检(BIST)电路集成,以实现射频输出功率,接收器增益,相对信道到信道相位和内部温度测量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 76- to 81-GHz packaged single-chip transceiver for automotive radar
This paper presents a flip-chip packaged 76- to 81-GHz transceiver chip implemented in SiGe BiCMOS technology for both long-range and short-range automotive radar applications. The single chip contains a two-channel transmitter with +18-dBm saturated output power per channel; an LO chain with ×4 multiplier, wide-band 20-GHz VCO with -100-dBc/Hz phase noise at 1-MHz offset referenced to a 77-GHz carrier, and divide-by-four prescaler; and a six-channel receiver with 10- to 11-dB noise figure, 14- to 15-dB conversion gain and +1-dBm input P1dB in unpackaged condition. The interconnect loss through the BGA package at 80 GHz is 1.5 to 2 dB. Built-in self-test (BIST) circuits are integrated to enable RF output power, receiver gain, relative channel-to-channel phase and internal temperature measurement.
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