评估衬底噪声对汽车微控制器传导EMI的影响

M. Cazzaniga, Patrice Joubert Doriol, Aurora Sanna, Emmanuel Blanc, V. Liberali, D. Pandini
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引用次数: 7

摘要

板级I/ o信号完整性和传导EMI已成为高速电路和封装设计人员的关键问题,也是现代电子系统性能和可靠性下降的主要因素,特别是对于必须满足严格的低EMI和抗噪声要求的汽车微控制器。I/O信号传导EMI的最有害的根本原因之一是在I/O环的配电网络上由切换I/O (SSO)产生的同时开关噪声。然而,这并不是唯一需要考虑的噪声源。实际上,SSO的一个经常被忽视的因素是由交换数字核心产生的噪声,该噪声传播到I/ o和整个普通硅衬底的对噪声敏感的片上模拟电路。在这项工作中,我们分析了衬底噪声对工业汽车微控制器的I/O信号传导EMI的影响,并将其与其他噪声源进行了比较。此外,我们证明了在前沿技术中对衬底噪声的技术保护的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Evaluating the impact of substrate noise on conducted EMI in automotive microcontrollers
Board-level I/Os signal integrity and conducted EMI have become a critical concern for high-speed circuit and package designers, and a major element of performance and reliability degradation in modern electronic systems, in particular for automotive microcontrollers, which must satisfy stringent low-EMI and noise immunity requirements. One of the most detrimental root causes of I/O signals conducted EMI is the simultaneous switching noise generated by the toggling I/Os (SSO) on the power distribution network of the I/O ring. However, this is not the only noise source that must be considered. In fact, an often overlooked contributor to SSO is the noise generated by the switching digital core that propagates to the I/Os and the noise-sensitive on-chip analog circuitry throughout the common silicon substrate. In this work, we analyze the impact of substrate noise on the I/O signals conducted EMI of an industrial automotive microcontroller, and we compare it against other noise sources. Moreover, we demonstrate the effectiveness of the technological protections against substrate noise in a leading-edge technology.
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