反演条件下超薄栅极电介质的厚度测量

2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517) Pub Date : 1900-01-01 DOI:10.1109/VTSA.2001.934522

W.J. Zhu, M. Khare, J. Snare, P. Varekamp, S. Ku, P. Agnello, T. Chen, T. Ma

{"title":"反演条件下超薄栅极电介质的厚度测量","authors":"W.J. Zhu, M. Khare, J. Snare, P. Varekamp, S. Ku, P. Agnello, T. Chen, T. Ma","doi":"10.1109/VTSA.2001.934522","DOIUrl":null,"url":null,"abstract":"Accurate measurement of inversion thickness is essential in ULSI technology for development and control of ultra-thin gate dielectric processes. However, the accuracy of the measurement can be severely affected by the high gate leakage current and series resistance. This paper presents a methodology to reduce the measurement error by optimizing the ac modulation frequency and test device structures.","PeriodicalId":388391,"journal":{"name":"2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Thickness measurement of ultra-thin gate dielectrics under inversion condition\",\"authors\":\"W.J. Zhu, M. Khare, J. Snare, P. Varekamp, S. Ku, P. Agnello, T. Chen, T. Ma\",\"doi\":\"10.1109/VTSA.2001.934522\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Accurate measurement of inversion thickness is essential in ULSI technology for development and control of ultra-thin gate dielectric processes. However, the accuracy of the measurement can be severely affected by the high gate leakage current and series resistance. This paper presents a methodology to reduce the measurement error by optimizing the ac modulation frequency and test device structures.\",\"PeriodicalId\":388391,\"journal\":{\"name\":\"2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517)\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VTSA.2001.934522\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTSA.2001.934522","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

反演厚度的精确测量对于超薄栅极介电过程的开发和控制至关重要。但是，过高的栅漏电流和串联电阻会严重影响测量的准确性。本文提出了一种通过优化交流调制频率和测试器件结构来减小测量误差的方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Thickness measurement of ultra-thin gate dielectrics under inversion condition

Accurate measurement of inversion thickness is essential in ULSI technology for development and control of ultra-thin gate dielectric processes. However, the accuracy of the measurement can be severely affected by the high gate leakage current and series resistance. This paper presents a methodology to reduce the measurement error by optimizing the ac modulation frequency and test device structures.

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来源期刊

2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517)

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