垂直电阻开关存储器(VRRAM):一种真实三维器件的高密度应用演示与分析

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2014-04-28 DOI:10.1109/VLSI-TSA.2014.6839683

T. Y. Wu, Y. S. Chen, P. Gu, W. Chen, H. Y. Lee, P. S. Chen, K. Tsai, C. Tsai, S. Z. Rahaman, Y. D. Lin, F. Chen, M. Tsai, T. Ku

{"title":"垂直电阻开关存储器(VRRAM):一种真实三维器件的高密度应用演示与分析","authors":"T. Y. Wu, Y. S. Chen, P. Gu, W. Chen, H. Y. Lee, P. S. Chen, K. Tsai, C. Tsai, S. Z. Rahaman, Y. D. Lin, F. Chen, M. Tsai, T. Ku","doi":"10.1109/VLSI-TSA.2014.6839683","DOIUrl":null,"url":null,"abstract":"The design, cost, and the operation methodology in the 2-terminal and 3-terminal VRRAM devices are studied. The real 3D vertical-contact RRAM devices are also demonstrated and the devices showed good memory performance. A self-rectifying device is proposed to suppress the sneak current in the VRRAM.","PeriodicalId":403085,"journal":{"name":"Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Vertical resistive switching memory (VRRAM): A real 3D device demonstration and analysis of high-density application\",\"authors\":\"T. Y. Wu, Y. S. Chen, P. Gu, W. Chen, H. Y. Lee, P. S. Chen, K. Tsai, C. Tsai, S. Z. Rahaman, Y. D. Lin, F. Chen, M. Tsai, T. Ku\",\"doi\":\"10.1109/VLSI-TSA.2014.6839683\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design, cost, and the operation methodology in the 2-terminal and 3-terminal VRRAM devices are studied. The real 3D vertical-contact RRAM devices are also demonstrated and the devices showed good memory performance. A self-rectifying device is proposed to suppress the sneak current in the VRRAM.\",\"PeriodicalId\":403085,\"journal\":{\"name\":\"Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-04-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI-TSA.2014.6839683\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2014.6839683","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

研究了二端和三端VRRAM器件的设计、成本和操作方法。实际的三维垂直接触RRAM器件也得到了演示，该器件具有良好的存储性能。提出了一种抑制虚电流的自整流装置。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Vertical resistive switching memory (VRRAM): A real 3D device demonstration and analysis of high-density application

The design, cost, and the operation methodology in the 2-terminal and 3-terminal VRRAM devices are studied. The real 3D vertical-contact RRAM devices are also demonstrated and the devices showed good memory performance. A self-rectifying device is proposed to suppress the sneak current in the VRRAM.

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Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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