Performance investigation of Negative Capacitance Germanium Double Gate-pFET (NCGe-DG-pFET) for improved analog applications

In the present work, a drain current model for novel device Negative Capacitance Germanium Double Gate p-type Field Effect Transistor (NCGe-DG-pFET) has been proposed by using Poisson's equation and Landau-Khalatnikov equation. In order to assess the efficacy of proposed device for sharp switching characteristics and low voltage/low power analog applications, electrical characteristics of the proposed device such as gate capacitance, subthreshold swing and drain current have been obtained and studied for a wide range of device parameters and bias conditions. By comparing the characteristics of the proposed device with conventional Germanium Double Gate p-type Field Effect Transistor (Ge-DG-pFET), it is demonstrated that proposed device exhibits enhanced gate controllability, improved current drivability and sub-60 mV/dec subthreshold swing (SS) so it is suitable for analog applications.