{"title":"改进的线性CMOS有源电阻结构","authors":"C. Popa","doi":"10.1109/EUROCON.2013.6625244","DOIUrl":null,"url":null,"abstract":"Original low-power low-voltage active resistor structure with improved performances will be presented. The linearity is strongly increased by implementing an original technique, using a proper current biasing of the differential core. The structures are implemented in 0.35μm CMOS technology and are supplied at ±3V. The circuits present a very good linearity (in the worst case, THD <;0.4%), correlated with an extended range of the input voltage (at least ±0.5V). The tuning range of the active resistors is about hundreds KΩ - MΩ.","PeriodicalId":136720,"journal":{"name":"Eurocon 2013","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Improved linearity CMOS active resistor structure\",\"authors\":\"C. Popa\",\"doi\":\"10.1109/EUROCON.2013.6625244\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Original low-power low-voltage active resistor structure with improved performances will be presented. The linearity is strongly increased by implementing an original technique, using a proper current biasing of the differential core. The structures are implemented in 0.35μm CMOS technology and are supplied at ±3V. The circuits present a very good linearity (in the worst case, THD <;0.4%), correlated with an extended range of the input voltage (at least ±0.5V). The tuning range of the active resistors is about hundreds KΩ - MΩ.\",\"PeriodicalId\":136720,\"journal\":{\"name\":\"Eurocon 2013\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Eurocon 2013\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUROCON.2013.6625244\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Eurocon 2013","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUROCON.2013.6625244","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Original low-power low-voltage active resistor structure with improved performances will be presented. The linearity is strongly increased by implementing an original technique, using a proper current biasing of the differential core. The structures are implemented in 0.35μm CMOS technology and are supplied at ±3V. The circuits present a very good linearity (in the worst case, THD <;0.4%), correlated with an extended range of the input voltage (at least ±0.5V). The tuning range of the active resistors is about hundreds KΩ - MΩ.
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