基于等效电路的ZnO掺杂轮廓对CIGS太阳能电池效率和寄生电阻损耗的影响

2013 IEEE International Conference on Circuits and Systems (ICCAS) Pub Date : 2013-11-21 DOI:10.1109/CIRCUITSANDSYSTEMS.2013.6671641

Nima Khoshsirat, Nurul Amziah Md Yunus, M. Hamidon, S. Shafie, N. Amin

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引用次数: 7

摘要

CIGS薄膜太阳电池的窗口层起到透明前接触和pn异质结n侧的作用。因此，窗口层的电学和光学性质的变化会影响电池的性能。利用SCAPS-1D模拟程序对作为CIGS太阳能电池最常用窗口层的掺铝氧化锌(ZnO)薄膜的性能进行了模拟研究。本研究旨在发现ZnO层掺杂对电池性能的影响。研究发现，将ZnO层中al含量提高至5%，可以提高电池效率，降低电池串联电阻和分流电阻。

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ZnO doping profile effect on CIGS solar cells efficiency and parasitic resistive losses based on cells equivalent circuit

The window layer of the CIGS thin film solar cells plays the role of transparent front contact and the n-side of pn-heterojunction. Thus the variation of window layers electrical and optical properties can affect the cell performance. Properties of Al-doped Zinc oxide (ZnO) thin film as most common used window layer for CIGS solar cells were studied via simulation using the simulation program called SCAPS-1D. This study is aimed to find the effect of ZnO layer doping profile on cell performance. It is found that increasing Al-content up to 5% in ZnO layer will lead to increasing the cell efficiency and will decrease the cell series and shunt resistance.

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2013 IEEE International Conference on Circuits and Systems (ICCAS)

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