{"title":"用于射频能量收集的无源整流器的隧道场效应管器件特性","authors":"David Cavalheiro, F. Moll, S. Valtchev","doi":"10.1109/NEWCAS.2015.7182102","DOIUrl":null,"url":null,"abstract":"The lack of high power conversion efficiency in RF passive rectifier circuits at sub-μW power levels with current MOSFET technologies is directly related with the difficulty of the transistors in conducting the required level of current at low voltage values. With a different carrier injection mechanism, the superior electrical characteristics of the Tunnel FET devices at low voltage values (sub-0.25 V) can outperform the process of energy conversion at ultra-low power, thus improving the operation range of RF energy harvesting circuits. In this work, a simulation study on the doping profile and material selection of Tunnel FET devices shows the impact of device properties in rectifier circuit efficiency.","PeriodicalId":404655,"journal":{"name":"2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Tunnel FET device characteristics for RF energy harvesting passive rectifiers\",\"authors\":\"David Cavalheiro, F. Moll, S. Valtchev\",\"doi\":\"10.1109/NEWCAS.2015.7182102\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The lack of high power conversion efficiency in RF passive rectifier circuits at sub-μW power levels with current MOSFET technologies is directly related with the difficulty of the transistors in conducting the required level of current at low voltage values. With a different carrier injection mechanism, the superior electrical characteristics of the Tunnel FET devices at low voltage values (sub-0.25 V) can outperform the process of energy conversion at ultra-low power, thus improving the operation range of RF energy harvesting circuits. In this work, a simulation study on the doping profile and material selection of Tunnel FET devices shows the impact of device properties in rectifier circuit efficiency.\",\"PeriodicalId\":404655,\"journal\":{\"name\":\"2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-06-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NEWCAS.2015.7182102\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEWCAS.2015.7182102","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Tunnel FET device characteristics for RF energy harvesting passive rectifiers
The lack of high power conversion efficiency in RF passive rectifier circuits at sub-μW power levels with current MOSFET technologies is directly related with the difficulty of the transistors in conducting the required level of current at low voltage values. With a different carrier injection mechanism, the superior electrical characteristics of the Tunnel FET devices at low voltage values (sub-0.25 V) can outperform the process of energy conversion at ultra-low power, thus improving the operation range of RF energy harvesting circuits. In this work, a simulation study on the doping profile and material selection of Tunnel FET devices shows the impact of device properties in rectifier circuit efficiency.
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