改善了0.3nm EOT硅酸铥界面层的低频噪声

2014 44th European Solid State Device Research Conference (ESSDERC) Pub Date : 2014-11-06 DOI:10.1109/ESSDERC.2014.6948835

M. Olyaei, B. Malm, E. Litta, P. Hellström, M. Östling

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引用次数: 1

摘要

研究了具有Tm2O3高k介电介质和硅酸铥(TmSiO)界面层的栅极堆的低频噪声(LFN)。测量的1/f噪声与具有可比IL厚度的SiOx/HfO2堆栈进行了比较。高钾硅酸铥IL的集成提供了0.3nm的缩放EOT，具有良好的迁移率和界面质量，从而获得了优异的LFN。与SiOx/HfO2器件相比，具有TmSiO/Tm2O3栅极电介质的器件的LFN噪声对于nmosfet和pmosfet来说是降低的。

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Improved low-frequency noise for 0.3nm EOT thulium silicate interfacial layer

Low-frequency noise (LFN) of gate stacks with Tm₂O₃ high-k dielectric and thulium silicate (TmSiO) interfacial layer (IL) is investigated. The measured 1/f noise is compared to SiO_x/HfO₂ stacks with comparable IL thickness. Integration of a high-k thulium silicate IL provides a scaled EOT of 0.3nm with good mobility and interface quality, hence excellent LFN is obtained. The LFN noise for devices with TmSiO/Tm₂O₃ gate dielectric is reduced for nMOSFETs and comparable for pMOSFETs compared to SiO_x/HfO₂ devices.

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2014 44th European Solid State Device Research Conference (ESSDERC)

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