{"title":"用于植入式设备中高效功率回收的高压DC/DC变换器","authors":"F. Mounaim, M. Sawan","doi":"10.1109/ICM.2009.5418643","DOIUrl":null,"url":null,"abstract":"Implantable biomedical devices such as sensors and neurostimulators require a near-field inductive link to transmit power wirelessly. However, the near-field induced voltage is usually much larger than the compliance of low-voltage integrated circuit technologies. Thus most integrated power recovery approaches limit the induced signal to low-voltages with inefficient shunt regulation, or voltage clipping. We propose using a high-voltage (HV) CMOS technology to fully integrate the inductive power recovery front-end while adopting a step-down approach where the induced signal is limited to a much higher voltage (20 V). We previously reported a first IC that includes a HV rectifier and a HV regulator, which provide up to 12 V regulated DC supply from a 20 V maximum AC input. In this paper, we report the design of a second HV custom IC that completes the front-end by integrating an adjustable step-down switched capacitor DC/DC converter (1:3, 1:2 or 2:3 ratio). The IC has been submitted for fabrication in DALSA-C08E technology and the total silicon area including pads is 9mm2. Post-layout simulation results show that the DC/DC converter achieves more than 90 % power efficiency while providing about 3.9 V output with 12 V input, 1 mA load, 1:3 conversion ratio, and 50 kHz switching frequency.","PeriodicalId":391668,"journal":{"name":"2009 International Conference on Microelectronics - ICM","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"High-voltage DC/DC converter for high-efficiency power recovery in implantable devices\",\"authors\":\"F. Mounaim, M. Sawan\",\"doi\":\"10.1109/ICM.2009.5418643\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Implantable biomedical devices such as sensors and neurostimulators require a near-field inductive link to transmit power wirelessly. However, the near-field induced voltage is usually much larger than the compliance of low-voltage integrated circuit technologies. Thus most integrated power recovery approaches limit the induced signal to low-voltages with inefficient shunt regulation, or voltage clipping. We propose using a high-voltage (HV) CMOS technology to fully integrate the inductive power recovery front-end while adopting a step-down approach where the induced signal is limited to a much higher voltage (20 V). We previously reported a first IC that includes a HV rectifier and a HV regulator, which provide up to 12 V regulated DC supply from a 20 V maximum AC input. In this paper, we report the design of a second HV custom IC that completes the front-end by integrating an adjustable step-down switched capacitor DC/DC converter (1:3, 1:2 or 2:3 ratio). The IC has been submitted for fabrication in DALSA-C08E technology and the total silicon area including pads is 9mm2. Post-layout simulation results show that the DC/DC converter achieves more than 90 % power efficiency while providing about 3.9 V output with 12 V input, 1 mA load, 1:3 conversion ratio, and 50 kHz switching frequency.\",\"PeriodicalId\":391668,\"journal\":{\"name\":\"2009 International Conference on Microelectronics - ICM\",\"volume\":\"57 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International Conference on Microelectronics - ICM\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICM.2009.5418643\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Conference on Microelectronics - ICM","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2009.5418643","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-voltage DC/DC converter for high-efficiency power recovery in implantable devices
Implantable biomedical devices such as sensors and neurostimulators require a near-field inductive link to transmit power wirelessly. However, the near-field induced voltage is usually much larger than the compliance of low-voltage integrated circuit technologies. Thus most integrated power recovery approaches limit the induced signal to low-voltages with inefficient shunt regulation, or voltage clipping. We propose using a high-voltage (HV) CMOS technology to fully integrate the inductive power recovery front-end while adopting a step-down approach where the induced signal is limited to a much higher voltage (20 V). We previously reported a first IC that includes a HV rectifier and a HV regulator, which provide up to 12 V regulated DC supply from a 20 V maximum AC input. In this paper, we report the design of a second HV custom IC that completes the front-end by integrating an adjustable step-down switched capacitor DC/DC converter (1:3, 1:2 or 2:3 ratio). The IC has been submitted for fabrication in DALSA-C08E technology and the total silicon area including pads is 9mm2. Post-layout simulation results show that the DC/DC converter achieves more than 90 % power efficiency while providing about 3.9 V output with 12 V input, 1 mA load, 1:3 conversion ratio, and 50 kHz switching frequency.