n掺杂ZnO纳米棒阵列的简易合成:增强紫外传感性能

2018 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2018-08-01 DOI:10.1109/SMELEC.2018.8481321

A. S. Ismail, M. H. Mamat, M. F. Malek, N. Azhar, N. H. Sulimai, R. A. Rani, A. Zoolfakar, M. Rusop

{"title":"n掺杂ZnO纳米棒阵列的简易合成:增强紫外传感性能","authors":"A. S. Ismail, M. H. Mamat, M. F. Malek, N. Azhar, N. H. Sulimai, R. A. Rani, A. Zoolfakar, M. Rusop","doi":"10.1109/SMELEC.2018.8481321","DOIUrl":null,"url":null,"abstract":"Nitrogen (N) doped zinc oxide (ZnO) nanorod arrays at different doping concentrations from 0 at.% (undoped) to 2 at. % have been prepared using sol-gel immerse method. FESEM images revealed that the average diameter increased when the concentration of N in ZnO increased. The 1-V measurement displayed that 1 at. % sample possessed the lowest resistance film and exhibit the highest UV sensing performance with sensitivity of 12.9.","PeriodicalId":110608,"journal":{"name":"2018 IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Facile Synthesis of N-doped ZnO Nanorod Arrays: Towards Enhancing the UV-sensing Performance\",\"authors\":\"A. S. Ismail, M. H. Mamat, M. F. Malek, N. Azhar, N. H. Sulimai, R. A. Rani, A. Zoolfakar, M. Rusop\",\"doi\":\"10.1109/SMELEC.2018.8481321\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Nitrogen (N) doped zinc oxide (ZnO) nanorod arrays at different doping concentrations from 0 at.% (undoped) to 2 at. % have been prepared using sol-gel immerse method. FESEM images revealed that the average diameter increased when the concentration of N in ZnO increased. The 1-V measurement displayed that 1 at. % sample possessed the lowest resistance film and exhibit the highest UV sensing performance with sensitivity of 12.9.\",\"PeriodicalId\":110608,\"journal\":{\"name\":\"2018 IEEE International Conference on Semiconductor Electronics (ICSE)\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Conference on Semiconductor Electronics (ICSE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2018.8481321\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Semiconductor Electronics (ICSE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2018.8481321","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

氮(N)掺杂氧化锌(ZnO)纳米棒阵列在不同掺杂浓度从0 at。%(未掺杂)到2 at。%采用溶胶-凝胶浸渍法制备。FESEM图像显示，随着ZnO中N浓度的增加，平均直径增大。1- v测量显示1 at。%样品具有最低的电阻膜和最高的紫外传感性能，灵敏度为12.9。

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Facile Synthesis of N-doped ZnO Nanorod Arrays: Towards Enhancing the UV-sensing Performance

Nitrogen (N) doped zinc oxide (ZnO) nanorod arrays at different doping concentrations from 0 at.% (undoped) to 2 at. % have been prepared using sol-gel immerse method. FESEM images revealed that the average diameter increased when the concentration of N in ZnO increased. The 1-V measurement displayed that 1 at. % sample possessed the lowest resistance film and exhibit the highest UV sensing performance with sensitivity of 12.9.

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2018 IEEE International Conference on Semiconductor Electronics (ICSE)

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