采用InP/InGaAs HBT技术的高比特率低功耗决策电路[主从d型触发器]

K. Ishii, H. Nosaka, M. Ida, K. Kurishima, M. Hirata, Takatorno Enoki, Tsugumichi Shibata
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引用次数: 0

摘要

我们使用InP/InGaAs异质结双极晶体管(HBTs)设计并制造了一个高比特率低功耗决策电路,其截止频率f/sub /约为150 GHz,最大振荡频率f/sub max/约为200 GHz。采用一种新型主从d型触发器(MS-DFF)电路作为决策核心电路。该决策电路的运行速度比传统MS-DFF核心快约15%。我们首次实现了高达60 Gbit/s的数据速率下的无差错操作。功耗仅约0.7 W,包括时钟、数据和输出缓冲器的功耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-bit-rate low-power decision circuit using InP/InGaAs HBT technology [master-slave D-type flip-flop]
We have designed and fabricated a high-bit-rate low-power decision circuit using InP/InGaAs heterojunction bipolar transistors (HBTs) with a cutoff frequency f/sub T/ of approximately 150 GHz and a maximum oscillation frequency f/sub max/ of approximately 200 GHz. A novel master-slave D-type flip-flop (MS-DFF) circuit was used as the decision core circuit. The decision circuit operates approximately 15% faster than one with a conventional MS-DFF core. We achieved error-free operation at a data rate of up to 60 Gbit/s for the first time. The power consumption was only approximately 0.7 W, including that of the clock, data, and output buffers.
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