低钾甲基硅氧烷多孔介质膜中铜的漂移

30th European Solid-State Device Research Conference Pub Date : 2000-09-11 DOI:10.1109/ESSDERC.2000.194751

T. Kikkawa, S. Mukaigawa, T. Oda, T. Aoki, Y. Shimizu

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引用次数: 0

摘要

在低介电常数甲基硅氧烷(MSZ)前驱体制备的多孔薄膜中测量了铜的漂移速率。与cvd - sio2相比，多孔MSZ膜具有更低的介电常数(k=1.8)和更慢的漂移速率。

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Copper Drifts in Porous Methylsilsesquiazane Low-k Dielectric Films

Copper drift rates were measured in porous low-dielectric-constant methylsilsesquioxane films derived from methylsilsesquiazane (MSZ) precursor. It is found that the porous MSZ film shows a lower dielectric constant (k=1.8) and a slower drift rate than that of CVD-SiO 2 .

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30th European Solid-State Device Research Conference

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