氧化电荷建模与CEA-TRAPPOX代码版本4。台式计算机上捕获模型的比较

1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471) Pub Date : 1999-09-13 DOI:10.1109/RADECS.1999.858546

J. Leray, P. Paillet, O. Flament, A. Torres

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引用次数: 6

摘要

在氧化物中捕获的电荷取决于大量的参数(陷阱的空间和能量分布、电压和剂量率分布、内部空间电荷效应等)。我们证明，用个人计算机进行一维模拟可以有效地从实验数据中提取氧化物参数，从而能够预测各种任务剖面中的MOS降解。

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Oxide charge modeling with CEA-TRAPPOX code version 4. Comparison of trapping models on desktop computer

The charge trapped in oxides depends on a large number of parameters (spatial and energetic distributions of traps, voltage and dose-rate profiles, internal space-charge effect, etc.). We demonstrate that 1D simulations with personal computers can be effective in extracting oxide parameters from experimental data, thus enabling prediction of MOS degradation in various mission profiles.

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1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)

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