UTBB FDSOI中模拟RF和毫米波设计的权衡:在35ghz LNA上的应用

2018 25th International Conference "Mixed Design of Integrated Circuits and System" (MIXDES) Pub Date : 2018-06-01 DOI:10.23919/MIXDES.2018.8436730

Salim El Ghouli, W. Grabinski, J. Sallese, A. Juge, C. Lallement

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引用次数: 1

摘要

最先进的射频和毫米波首切电路设计需要简单的手工计算方法，以避免耗时的迭代模拟。在先进技术中使用的经典MOSFET尺寸方法仍然依赖于有问题和不准确的概念。此外，针对旧批量技术提出的悲观经验法则不再有用，而且会导致过度设计。这项工作利用中等反转的优势，并使用低频和高频的优点数字，为35ghz低噪声放大器(LNA)的28nm UTBB FDSOI技术提供了一种方便的尺寸确定方法。

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Analog RF and mm-Wave design Tradeoff in UTBB FDSOI: Application to a 35 GHz LNA

The state-of-the art RF and millimeter-wave first-cut circuits design requires simple hand calculation methods to avoid time-consuming iterative simulations. The classical MOSFET sizing methods used in advanced technologies, still rely on questionable and inaccurate concepts. Moreover, the pessimistic rules of thumb proposed for older bulk technologies are no more useful and lead to overdesign. This work takes advantage of the Moderate Inversion and uses low and high frequency figures of merit to provide a convenient sizing method for a 35 GHz Low Noise Amplifier (LNA) in 28 nm UTBB FDSOI technology.

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2018 25th International Conference "Mixed Design of Integrated Circuits and System" (MIXDES)

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