GaAs上的大块和表面织构MoS/ sub2 /薄膜

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI:10.1109/COMMAD.2002.1237223

G. Jakovidis, I. Jamieson, K. Pavlov, A. Singh

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引用次数: 2

摘要

采用射频溅射技术，在GaAs表面制备了适合光伏应用的高取向MoS/sub /薄膜。800/spl℃下的沉积表现出强烈的[00l] x射线反射，表明其为II型体织构。原子力显微镜(AFM)揭示了在800和80℃下生长的薄膜表面血小板的取向，与x射线数据一致。该研究表明，只要保持较低的射频功率(50 W)和较高的温度，就可以沉积出质地良好的II型薄膜，厚度可达500 nm，而无需采用昂贵的蒸汽传输技术。

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Bulk and surface textured MoS/sub 2/ films on GaAs

Highly oriented MoS/sub 2/ films on GaAs, suitable for photovoltaic applications, have been obtained using radio frequency (RF)-sputtering. Depositions at 800/spl deg/C exhibit strong [00l] X-ray reflections, indicative of bulk type II texture. Atomic force microscopy (AFM) reveals the orientation of surface platelets for films grown at 800/spl deg/C and 80/spl deg/C, to be consistent with the X-ray data. This study demonstrates that provided the RF-power is kept low (50 W) and the temperature high, well textured type II films up to 500 nm can be deposited, without the need to resort to expensive vapor transport techniques.

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2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)

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