深亚微米总线上的片上串扰特性

Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474) Pub Date : 2000-03-15 DOI:10.1109/ICCDCS.2000.869815

S. Delmas Bendhia, F. Caignet, E. Sicard

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引用次数: 16

摘要

本文介绍了在0.18 /spl μ m CMOS工艺下串扰效应的实验测量。基于片上测量方法，我们对不同耦合线长度的典型互连总线上的串扰进行了表征，并推导出临界耦合线长度的准则。同时切换攻击者数量对受害者线路的影响也进行了分析。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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On chip crosstalk characterization on deep submicron buses

This paper presents the experimental measurement of crosstalk effects in 0.18 /spl mu/m CMOS technology. Based on an on-chip measurement method, we characterize crosstalk on typical interconnect buses for different length of coupled lines, and deduce guidelines concerning critical coupled line length. The effect of the number of aggressors switching simultaneously, on the victim line, is also analyzed.

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Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474)

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