等离子体辅助MOCVD生长Al/sub x/Ga/sub 1-x/N

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI:10.1109/COMMAD.2002.1237185

P. Arifin, Sugianto, E. Suprianto, N. Wendri, H. Sutanto, M. Budiman, M. Barmawi

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引用次数: 0

摘要

采用等离子体辅助金属有机化学气相沉积(PA-MOCVD)技术在(0001)蓝宝石衬底上生长了Al/sub x/Ga/sub 1-x/N薄膜。以等离子体裂解的N/sub 2/、三甲基铝(TMAl)和三甲基镓(TMGa)分别作为氮源、铝源和镓源。在室温下进行的能量色散x射线(EDX)测量结果表明，Al (x)的摩尔分数与TMAl/(TMAl + TMGa)气相的摩尔分数呈线性关系。带隙能与Al摩尔分数(x)的关系呈二次表达式，E/sub g/ (x) = 3.35 + 1.55x + 1.3x/sup 2/ eV。x < 0.34的Al/sub x/Ga/sub 1-x/N层表现为N型导电，室温迁移率在5 ~ 10 cm/sup 2//V/spl middot/s范围内，电子浓度为9.0 /spl倍/ 10/sup 16/ ~ 1.4 /spl倍/ 10/sup 19/cm/sup -3/。

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Growth of Al/sub x/Ga/sub 1-x/N by plasma assisted MOCVD

Thin films Al/sub x/Ga/sub 1-x/N were grown on (0001) sapphire substrates by plasma assisted metal-organic chemical vapor deposition (PA-MOCVD). Plasma-cracked N/sub 2/, trimethylaluminum (TMAl) and trimethylgallium (TMGa) were used as nitrogen, aluminum and gallium sources, respectively. The results of energy dispersive X-ray (EDX) measurements performed at room temperature yielded the linear dependence of molar fraction of Al (x) on molar fraction of vapor phase of TMAl/(TMAl + TMGa). The dependence of the band gap energy on the molar fraction of Al (x) showed quadratic expression, E/sub g/ (x) = 3.35 + 1.55x + 1.3x/sup 2/ eV. Al/sub x/Ga/sub 1-x/N layers with x < 0.34 show n-type conduction with room temperature mobilities in the range of 5 to 10 cm/sup 2//V/spl middot/s, and electron concentrations of 9.0 /spl times/ 10/sup 16/ to 1.4 /spl times/ 10/sup 19/cm/sup -3/.

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2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)

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