{"title":"物联网应用的MTJ磁化开关机制","authors":"Abdelrahman G. Qoutb, E. Friedman","doi":"10.1145/3194554.3194624","DOIUrl":null,"url":null,"abstract":"Different magnetization mechanisms, structures, and electrical properties of MTJ-based MRAM are described in the context of IoT applications. MTJ-based MRAM provides non-volatility (high retention time), low power, and high speed. This memory has a broad variety of applications. One important example is IoT. A comparative study of the magnetization mechanisms provides insight into which MTJ structures and magnetization mechanisms best support different IoT applications.","PeriodicalId":215940,"journal":{"name":"Proceedings of the 2018 on Great Lakes Symposium on VLSI","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"MTJ Magnetization Switching Mechanisms for IoT Applications\",\"authors\":\"Abdelrahman G. Qoutb, E. Friedman\",\"doi\":\"10.1145/3194554.3194624\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Different magnetization mechanisms, structures, and electrical properties of MTJ-based MRAM are described in the context of IoT applications. MTJ-based MRAM provides non-volatility (high retention time), low power, and high speed. This memory has a broad variety of applications. One important example is IoT. A comparative study of the magnetization mechanisms provides insight into which MTJ structures and magnetization mechanisms best support different IoT applications.\",\"PeriodicalId\":215940,\"journal\":{\"name\":\"Proceedings of the 2018 on Great Lakes Symposium on VLSI\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-05-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2018 on Great Lakes Symposium on VLSI\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/3194554.3194624\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2018 on Great Lakes Symposium on VLSI","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/3194554.3194624","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
MTJ Magnetization Switching Mechanisms for IoT Applications
Different magnetization mechanisms, structures, and electrical properties of MTJ-based MRAM are described in the context of IoT applications. MTJ-based MRAM provides non-volatility (high retention time), low power, and high speed. This memory has a broad variety of applications. One important example is IoT. A comparative study of the magnetization mechanisms provides insight into which MTJ structures and magnetization mechanisms best support different IoT applications.
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