对英特尔22nm三栅极技术的自热可靠性考虑

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI:10.1109/IRPS.2013.6532036

C. Prasad, L. Jiang, D. Singh, M. Agostinelli, C. Auth, P. Bai, T. Eiles, J. Hicks, C. Jan, K. Mistry, S. Natarajan, B. Niu, P. Packan, D. Pantuso, I. Post, S. Ramey, A. Schmitz, B. Sell, S. Suthram, J. Thomas, C. Tsai, P. Vandervoorn

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引用次数: 98

摘要

本文描述了在英特尔22纳米工艺技术上进行的各种自热测量，并概述了其可靠性影响。热模拟结果与分析数据的比较表明，两者吻合良好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Self-heat reliability considerations on Intel's 22nm Tri-Gate technology

This paper describes various measurements on self-heat performed on Intel's 22nm process technology, and outlines its reliability implications. Comparisons to thermal modeling results and analytical data show excellent matching.

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2013 IEEE International Reliability Physics Symposium (IRPS)

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