氧化物电容萃取新方法

2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 2007-10-22 DOI:10.1109/BIPOL.2007.4351866

C. Raya, T. Schwartzmann, P. Chevalier, F. Pourchon, D. Céli, T. Zimmer

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引用次数: 2

摘要

根据双极晶体管的不同几何形状，提出了一种新的可扩展的寄生电容确定方法。从冷S参数测量的总电容可以分为区域结电容、外围结电容和恒定的氧化物贡献。将该方法应用于ST最先进的全自对准双聚BiCMOS技术，并对结果进行了讨论。

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New Method for Oxide Capacitance Extraction

Based on different geometries of bipolar transistors, a new scalable method to determine the parasitic capacitances is presented. The total capacitance measured from cold S parameters could be split in an area junction capacitance, a peripheral junction capacitance and a constant oxide contribution. This method is applied to a ST state-of-art fully self aligned double poly BiCMOS technology, and results are discussed.

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2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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