50nm栅长氢端金刚石场效应晶体管的直流工作特性和性能潜力

69th Device Research Conference Pub Date : 2011-06-20 DOI:10.1109/DRC.2011.5994454

D. Moran, O. Fox, H. McLelland, S. Russell, P. May

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摘要

端氢金刚石表面在高功率高频场效应晶体管(fet)的发展中显示出独特的潜力[1]。然而，随着栅极长度的减少，对内在性能限制和器件操作的进一步探索对于揭示这种奇异材料系统作为一种可行且具有竞争力的高功率和高频器件技术的潜力至关重要。

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Intrinsic DC operation and performance potential of 50nm gate length hydrogen-terminated diamond field effect transistors

The hydrogen-terminated diamond surface has demonstrated unique potential in the development of high power and high frequency field effect transistors (FETs) [1]. Further exploration into the intrinsic performance limitations and device operation as gate length is reduced however is essential in unveiling the potential of this exotic material system as a viable and competitive high power and high frequency device technology.

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69th Device Research Conference

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