氧化基纳米层与硅衬底集成用于新的多功能应用

2022 IEEE 41st International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2022-10-10 DOI:10.1109/ELNANO54667.2022.9927124

R. Savkina, Oleksii Smirnov, S. Mulenko

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引用次数: 0

摘要

氧化物基结构由于其在能源、环境和检测领域的先进纳米器件和纳米系统中的潜在应用而受到越来越多的关注。本文采用反应脉冲激光沉积和声化学合成的方法，设计了基于纳米铬(Cr3-XO3-Y)和氧化铁(Fe2O3-Y)层的多组分结构和复合纳米结构Si-SiO2-(CaO-SiO2)。研究了所制备的氧化基结构的电学和光电性能。在光子能量大于硅带隙的光激发下，与硅衬底集成的纳米层的表面光电压响应性发生了惊人的变化。此外，与所研究结构的不同来源、结构和几何形状无关，它们都观察到电感型阻抗。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Oxide-Based Nanometric Layers Integrated With Silicon Substrate For New Multifunctional Applications

Oxide-based structures are receiving increasing interest due to their potential application in advanced nanodevices and nanosystems toward sectors of energy, environmental and detecting. In this work, multi-component structures based on nanometric chromium (Cr3-XO3-Y) and iron oxide (Fe2O3-Y) layers and composite nanostructure such as Si-SiO2-(CaO-SiO2) were designed using method of reactive pulsed laser deposition and sonochemical synthesis. Electric and photoelectric properties of the obtained oxide-based structures were investigated. It was found a surprising changes in the surface photovoltage responsivity of the nanometric layers integrated with silicon substrate at photoexcitation with photon energies greater than the band gap of Si. Besides, independent of the different origin, configuration and geometry of the structures studied, the inductive-type impedance has been observed for all of them.

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2022 IEEE 41st International Conference on Electronics and Nanotechnology (ELNANO)

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