{"title":"铜互连多通孔结构的上游电迁移研究","authors":"M. Lin, N. Jou, James W. Liang, A. Juan, K. Su","doi":"10.1109/IITC.2009.5090347","DOIUrl":null,"url":null,"abstract":"Upstream Electromigration (EM) study was performed on different multiple via structures with different Cu line dimensions. EM performance was found to be dependent on both via layout and Cu line dimension. Failure analysis showed different EM failure modes and diffusion paths on these structures with their different grain morphology. Finite element analysis is applied to find out the current density profiles of these structures and explain their EM results. Simulated resistance increase was found to be dependent on the size and location of EM induced void in these structures.","PeriodicalId":301012,"journal":{"name":"2009 IEEE International Interconnect Technology Conference","volume":"15 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Upstream electromigration study on multiple via structures in copper interconnect\",\"authors\":\"M. Lin, N. Jou, James W. Liang, A. Juan, K. Su\",\"doi\":\"10.1109/IITC.2009.5090347\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Upstream Electromigration (EM) study was performed on different multiple via structures with different Cu line dimensions. EM performance was found to be dependent on both via layout and Cu line dimension. Failure analysis showed different EM failure modes and diffusion paths on these structures with their different grain morphology. Finite element analysis is applied to find out the current density profiles of these structures and explain their EM results. Simulated resistance increase was found to be dependent on the size and location of EM induced void in these structures.\",\"PeriodicalId\":301012,\"journal\":{\"name\":\"2009 IEEE International Interconnect Technology Conference\",\"volume\":\"15 3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE International Interconnect Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2009.5090347\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2009.5090347","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Upstream electromigration study on multiple via structures in copper interconnect
Upstream Electromigration (EM) study was performed on different multiple via structures with different Cu line dimensions. EM performance was found to be dependent on both via layout and Cu line dimension. Failure analysis showed different EM failure modes and diffusion paths on these structures with their different grain morphology. Finite element analysis is applied to find out the current density profiles of these structures and explain their EM results. Simulated resistance increase was found to be dependent on the size and location of EM induced void in these structures.
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