{"title":"功率半导体器件建模专用于电路仿真","authors":"P. Leturcq","doi":"10.1109/ISPSD.1999.764034","DOIUrl":null,"url":null,"abstract":"The aim of this paper is to recall the problematics of circuit simulation in the field of power electronics and to critically review recent approaches to semiconductor device modelling for that purpose. In particular, as far as hardware problems are concerned, the discussion puts forward the need for physics-based models taking into account the distributed nature of charge carrier transport.","PeriodicalId":352185,"journal":{"name":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","volume":"185 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Power semiconductor device modelling dedicated to circuit simulation\",\"authors\":\"P. Leturcq\",\"doi\":\"10.1109/ISPSD.1999.764034\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The aim of this paper is to recall the problematics of circuit simulation in the field of power electronics and to critically review recent approaches to semiconductor device modelling for that purpose. In particular, as far as hardware problems are concerned, the discussion puts forward the need for physics-based models taking into account the distributed nature of charge carrier transport.\",\"PeriodicalId\":352185,\"journal\":{\"name\":\"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)\",\"volume\":\"185 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1999.764034\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1999.764034","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Power semiconductor device modelling dedicated to circuit simulation
The aim of this paper is to recall the problematics of circuit simulation in the field of power electronics and to critically review recent approaches to semiconductor device modelling for that purpose. In particular, as far as hardware problems are concerned, the discussion puts forward the need for physics-based models taking into account the distributed nature of charge carrier transport.